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The Vishay General Semiconductor - Diodes Division 1N5819-E3/51 is a Schottky Barrier Rectifier designed for low voltage, high frequency applications. It features a maximum average forward rectified current of 1.0 A and a maximum repetitive peak reverse voltage of 40 V. The device exhibits a maximum instantaneous forward voltage of 0.600 V at 1.0 A and a typical junction capacitance of 110 pF at 4.0 V and 1.0 MHz. It operates within a temperature range of -65 to +125 °C and utilizes the DO-204AL (DO-41) axial package.
Verify the specific ordering suffix against official documentation to confirm packaging type and quantity. Confirm RoHS compliance status and material categorization requirements prior to procurement. Ensure lead length specifications match the intended PCB mounting configuration for accurate thermal resistance calculations.
Select this component for designs requiring low forward voltage drop and fast switching speeds in power conversion circuits. Evaluate the 1.0 A average forward current rating against peak load requirements. Consider the 40 V reverse voltage rating relative to circuit operating voltages and transient spikes.
This part belongs to the 1N5817 through 1N5819 series of Schottky Barrier Rectifiers from Vishay General Semiconductor. These devices are manufactured using silicon technology and are packaged in the DO-204AL (DO-41) axial case. The E3 suffix indicates RoHS compliance and matte tin plated leads.
Direct substitutes include other manufacturers' 1N5819 variants or Vishay's 1N5819-E3/54 and 1N5819-E3/73, which share identical electrical characteristics but may differ in packaging format.