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The 1N5819UB1 is an engineering model aerospace-grade Schottky diode housed in a hermetically sealed ceramic LCC-2B package. It features a repetitive peak reverse voltage of 45 V and an average forward current rating of 1 A at a junction temperature of 150 °C. The device exhibits a maximum forward voltage drop of 0.49 V at 1 A and +25 °C, with a total capacitance of 70 pF. It provides radiation resistance up to 3 Mrad (Si) high dose rate and 150 krad (Si) low dose rate.
Verify the specific ordering code suffix against the manufacturer's official documentation to confirm the engineering model status and lead finishing type. Confirm that the required quality level matches the application needs, as flight models require ESCC qualification maintenance lot references. Ensure the waffle pack delivery format aligns with assembly handling capabilities.
Select this component when a hermetically sealed surface mount Schottky rectifier is required for high-reliability environments. The LCC-2B package offers a footprint compatible with industry standards while providing superior thermal performance. Consider the radiation hardness specifications if the application involves exposure to ionizing radiation or space conditions.
This part belongs to the 1N5819U series of aerospace Schottky diodes manufactured by STMicroelectronics. The series utilizes full planar technology to ensure high reliability and superior performance characteristics compared to standard commercial equivalents. The engineering model variant serves as a precursor to flight-qualified versions under the same electrical specification framework.
Direct substitutes include the 1N5819U01B and 1N5819U02B flight models within the same family. Verify package compatibility and lead finishing requirements before substitution.