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The JAN1N5819UR-1/TR is a surface-mount Schottky barrier rectifier manufactured by Microchip Technology. It features a DO-213AB (MELF) glass package and provides an average forward current of 1 A with a maximum repetitive reverse voltage of 45 V. The device exhibits a low forward voltage drop of 490 mV at 1 A and a maximum reverse leakage current of 50 µA at 45 V. It supports a forward surge current of 25 A and operates within a junction temperature range of -65°C to +125°C.
Verify the specific ordering suffix UR-1/TR against the manufacturer's datasheet to confirm the tape-and-reel packaging format and MIL-PRF-19500/586 qualification level. Ensure compatibility with automated surface-mount assembly processes given the MELF form factor. Cross-reference the RoHS status, as military variants often differ from commercial standards.
Select this component when a hermetically sealed, high-reliability Schottky rectifier is required for space-constrained designs. The DO-213AB package offers a compact footprint compared to axial leads while maintaining robust thermal performance. Consider the 45 V rating for low-voltage power paths where standard silicon rectifiers would incur excessive forward voltage loss.
This part belongs to the 1N5819 series of 1 Amp Schottky Barrier Rectifiers. It shares core electrical specifications with the through-hole JAN1N5819-1 but utilizes a surface-mount MELF package. The product line includes various qualification levels such as JAN, JANTX, and JANTXV, all adhering to the MIL-PRF-19500/586 standard for military-grade reliability.
JAN1N5819-1