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The EVVO 1N5819W is a Schottky barrier rectifier featuring a maximum repetitive peak reverse voltage of 40 V and an average forward rectified current of 1 A. It utilizes a metal silicon junction with majority carrier conduction to achieve low forward voltage drop and high efficiency. The device operates within a junction temperature range of -55°C to +150°C and is housed in a plastic SOD-123FL surface-mount package.
Verify the specific manufacturer designation, as the 1N5819W part number is widely used by multiple semiconductor producers including Diotec and Vishay. Confirm that the component matches the SOD-123FL package outline and electrical specifications provided in the official datasheet before integration into designs requiring precise thermal or voltage ratings.
Select this component for designs requiring a compact surface-mount Schottky rectifier with a 40 V blocking voltage. Ensure the application stays within the 1 A average forward current limit and accounts for the specified junction temperature range. Verify compatibility with the SOD-123FL footprint during PCB layout.
This component belongs to the 1N5817W through 1N5819W series of Schottky barrier rectifiers. These devices share identical mechanical packaging and general features, differing primarily in their maximum DC blocking voltage ratings of 20 V, 30 V, and 40 V respectively.
Cross-reference with other manufacturers' 1N5819 equivalents such as VS-1N5819 or 1N5819WS. Verify that substitute parts match the SOD-123FL package dimensions and meet the 40 V / 1 A electrical requirements.