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The 1N5819W is a Schottky barrier rectifier manufactured by Shenzhen Slkormicro Semicon Co., Ltd. It features an average forward current of 1 A and a maximum repetitive peak reverse voltage of 40 V. The device utilizes a metal silicon junction with majority carrier conduction to achieve low power loss and high efficiency. Key electrical characteristics include a low forward voltage drop, high surge capability, and negligible switching losses. Packaged in DO-204AL (DO-41), it operates within a temperature range of -65 °C to +125 °C.
Verify the specific manufacturer designation as Shenzhen Slkormicro Semicon Co., Ltd. differs from common industry sources listing STMicroelectronics or onsemi. Confirm RoHS compliance status and package dimensions against the official datasheet before integration. Ensure the component meets all environmental and electrical specifications required for the target application.
Select this component for designs requiring efficient rectification at low voltages and high frequencies. The DO-41 axial package facilitates through-hole mounting. Consider the 40 V reverse voltage rating and 1 A current capacity when sizing the circuit. Evaluate thermal management requirements given the operating temperature limits and forward voltage characteristics.
This part belongs to the standard 1N58xx series of Schottky barrier rectifiers. These devices are widely recognized for their superior performance compared to standard silicon rectifiers in terms of speed and forward voltage drop. The 1N5819 variant specifically targets 40 V applications within this family.
Public confirmed substitute part numbers: 1N5819, 1N5819RL, 1N5819W.