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The Diotec Semiconductor 1N5820 is a Schottky Barrier Rectifier Diode designed for low-voltage, high-frequency applications. It features an average forward current rating of 3 A and a repetitive peak reverse voltage of 20 V. The device exhibits a maximum forward voltage of less than 0.85 V at 1 A and a typical junction capacitance of 9.4 pF. It supports a peak forward surge current of up to 165 A under standard conditions. The component operates within a junction temperature range of -50°C to +150°C and utilizes the DO-201AD axial leaded package.
Verify the specific manufacturer lot and datasheet revision before integration, as Diotec reserves the right to modify product specifications without notice. Confirm compliance with RoHS and ELV directives for your target market. Ensure thermal management aligns with the specified junction-to-ambient resistance values under your actual operating ambient temperature constraints.
Select this component when a low forward voltage drop and rapid recovery are required in power conversion stages. The 3 A current rating and 20 V breakdown voltage define its operational limits. Consider the DO-201AD package size for through-hole mounting requirements. Evaluate thermal derating curves if operation exceeds standard ambient temperatures to maintain reliability.
This part belongs to the 1N5820...1N5822 series of Schottky Barrier Rectifier Diodes manufactured by Diotec Semiconductor AG. The series shares similar structural characteristics but varies in reverse voltage ratings. These components are engineered for commercial and industrial grade applications requiring ordinary reliability levels in standard electronic circuits.
Cross-reference with other manufacturers' 1N5820 equivalents such as Vishay 1N5820-E3/90 or Taiwan Semiconductor 1N5820 A0G. Verify that substitute parts match the 3 A current, 20 V voltage, and DO-201AD package dimensions before implementation.