1N5820 B0G

Overview

The Taiwan Semiconductor 1N5820 B0G is a Schottky barrier rectifier diode designed for low-voltage, high-frequency applications. It features an average forward current of 3 A and a maximum repetitive peak reverse voltage of 20 V. The device utilizes a silicon construction with a chrome barrier metal and epitaxial design. Key electrical parameters include a maximum forward voltage of 475 mV at rated current and a maximum reverse leakage current of 500 uA. It supports a non-repetitive peak forward surge current of 80 A and operates within a junction temperature range of -55 °C to +125 °C. The component is housed in a DO-201AD (DO-27) axial leaded package.

Feature Summary

• Employs Schottky barrier principle for extremely fast switching and low power loss
• Features guardring structure for enhanced overvoltage protection
• Utilizes oxide passivation and metal overlap contact for reliability
• Designed for high frequency operation and polarity protection

Applications

• Rectifiers in low-voltage, high-frequency inverters
• Free wheeling diodes in DC-DC converters
• Polarity protection circuits
• General purpose rectification in consumer electronics

Procurement Notes

Verify the specific suffix 'B0G' against the official Taiwan Semiconductor datasheet to confirm packaging type and compliance status. Ensure the ordering quantity aligns with manufacturer minimum order requirements. Confirm RoHS and REACH compliance details directly from the product specification document before procurement.

Selection Notes

Select this component for applications requiring low forward voltage drop and high efficiency at low voltages. The 3 A current rating and 20 V breakdown voltage define its operational limits. Consider the DO-201AD package for through-hole mounting. Verify thermal management requirements based on the specified operating temperature range and power dissipation characteristics.

Part Context

The 1N5820 series belongs to a family of Schottky barrier rectifiers widely used in power supply designs. Taiwan Semiconductor manufactures this component using silicon technology. The part is distinct from similar series members like the 1N5821 or 1N5822 by its specific 20 V reverse voltage rating. It serves as a standard solution for general-purpose rectification where speed and efficiency are prioritized.

Replacement Considerations

Cross-reference with other manufacturers offering the 1N5820 specification, such as Vishay (1N5820-E3/90) or Diotec (1N5820). Verify that substitute parts match the 3 A forward current, 20 V reverse voltage, and DO-201AD package dimensions. Ensure equivalent electrical parameters for forward voltage and reverse leakage current.