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The Microchip Technology 1N5820US is a surface-mount Schottky barrier rectifier housed in the SQ-MELF, B package. It features a maximum repetitive reverse voltage of 30 V and an average forward rectified current rating of 3 A. The device exhibits a low forward voltage drop of 500 mV at 3 A and a maximum reverse leakage current of 100 µA at 30 V. Operating junction temperature ranges from -65°C to 125°C.
Verify component status carefully as distribution channels may list this part as discontinued or obsolete. Confirm availability through official Microchip Technology representatives or authorized distributors. Ensure the specific SQ-MELF, B package matches design requirements. Check for RoHS compliance status prior to integration into regulated assemblies.
Select the 1N5820US when a 30 V reverse voltage rating and 3 A continuous current capability are required in a surface-mount form factor. Compare against axial lead equivalents like the 1N5820 if PCB space permits through-hole mounting. Evaluate thermal management needs given the 125°C maximum junction temperature limit and small package size.
This component belongs to the 1N582x series of Schottky barrier rectifiers manufactured by Microchip Technology. The US suffix typically denotes the specific SQ-MELF, B surface-mount package variant within this family. Other series members include different voltage ratings such as 20 V or 40 V options.
Publicly confirmed substitute part numbers for the Microchip 1N5820US are not available in the provided documentation. Cross-referencing with other manufacturers' 30 V, 3 A Schottky diodes in similar packages requires independent verification of pinout and electrical specifications.