SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi 1N5821G is a silicon Schottky barrier rectifier designed for high-efficiency power conversion. It features a 3 A average forward current rating and a 30 V maximum repetitive peak reverse voltage. The device utilizes a DO-201AD axial through-hole package, ensuring compatibility with standard PCB layouts. Key electrical characteristics include a low forward voltage drop of approximately 500 mV at rated current and a non-repetitive peak forward surge current capability of 80 A. Operating temperatures range from -65 °C to +125 °C.
Verify the specific suffix 'G' against the manufacturer's official datasheet to confirm RoHS compliance status and packaging details. Confirm that the component is currently available for procurement, as availability may vary by region or production lifecycle stage. Ensure the ordering part number matches the exact electrical specifications required for the design.
Select this component when a robust through-hole Schottky rectifier is needed for moderate voltage applications. The 30 V rating suits low-voltage DC systems, while the 3 A current capacity handles typical load requirements. Consider the DO-201AD package size for mechanical constraints and verify thermal management needs based on ambient operating conditions.
The 1N5821G belongs to the widely recognized 1N582x series of Schottky rectifiers, which are standard components in general-purpose electronics. Manufactured by onsemi, this variant maintains the industry-standard pinout and form factor of its predecessors. The series is known for providing a balance between cost-effectiveness and performance in basic rectification tasks.
Compatible substitutes include the Vishay 1N5821/72 and CDI-DIODE 1N5821US. Verify that replacement parts match the 3 A current, 30 V voltage, and DO-201AD package dimensions before integration.