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The Microchip Technology 1N5821US is a silicon Schottky barrier rectifier designed for surface mount applications. It features a maximum average forward current of 3.0 A and a working peak reverse voltage of 30 V. The device utilizes hermetically sealed, leadless SQ-MELF packaging with metallurgically bonded double plug construction. Electrical characteristics include a maximum reverse leakage current of 100 µA at 30 V and a forward voltage drop of 500 mV at 3 A. The component operates within a junction temperature range of -65°C to +125°C.
Verify the specific manufacturer source, as CDI-DIODE datasheets reference this part number under Microchip branding. Confirm RoHS compliance status, as some distributor listings indicate non-compliance. Check for active production status versus obsolete or discontinued classifications from official Microchip channels before procurement planning.
Select this component when a hermetically sealed surface mount Schottky rectifier is required for high-reliability designs. Ensure the 30 V reverse voltage rating meets circuit requirements. Verify that the SQ-MELF footprint matches the PCB layout constraints. Consider thermal derating guidelines for operation above 55°C ambient conditions.
This part belongs to the 1N582x series of Schottky barrier rectifiers manufactured by Microchip Technology. The series includes variants such as 1N5820US and 1N5822US, differentiated primarily by their peak reverse voltage ratings. These components are typically specified for MIL-PRF-19500/620 standards, indicating their use in defense and aerospace sectors requiring strict quality control.
Publicly confirmed substitute part numbers are not available in the provided documentation.