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The Vishay General Semiconductor - Diodes Division 1N5822-E3/73 is a Schottky barrier plastic rectifier designed for high-frequency applications. It features a DO-201AD axial through-hole package with matte tin-plated leads. The device provides a maximum repetitive peak reverse voltage of 40 V and supports an average forward rectified current of 3.0 A at 95 °C lead temperature. It exhibits a low instantaneous forward voltage drop of 0.525 V at 3.0 A and handles a non-repetitive peak forward surge current of 80 A. Operating junction temperatures range from -65 °C to +125 °C.
Verify the specific ordering suffix /73 corresponds to the required ammo pack delivery mode, as other suffixes indicate different packaging such as tape and reel. Confirm RoHS compliance status via the E3 designation and ensure the component meets JESD 201 class 1A whisker test requirements if applicable to your supply chain standards.
Select this component when a 40 V reverse voltage rating and 3 A continuous current capacity are required in a standard DO-201AD axial package. Ensure the application environment stays within the specified -65 °C to +125 °C operating junction temperature range. Verify that the thermal resistance parameters align with your heat dissipation design constraints.
This part belongs to the 1N5820, 1N5821, and 1N5822 series of Schottky Barrier Plastic Rectifiers manufactured by Vishay General Semiconductor. All variants share identical physical dimensions and electrical characteristics except for their maximum repetitive peak reverse voltage ratings, which vary across the series.
Direct substitutes include the 1N5822G from onsemi and the 1N5822-E3/54 from Vishay General Semiconductor. These alternatives maintain the same core specifications and package type.
The E3 suffix denotes that the component is RoHS-compliant, commercial grade, and has passed the JESD 201 class 1A whisker test.
Polarity is indicated by a color band on the component body, which denotes the cathode end.