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Product Detailed Parameters
- Description：DIODE SCHOTTKY 30V 15A DO5
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：30 V
- Current - Average Rectified (Io)：15A
- Voltage - Forward (Vf) (Max) @ If：470 mV @ 15 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：10 mA @ 20 V
- Capacitance @ Vr, F：-
- Mounting Type：Chassis, Stud Mount
- Package / Case：DO-203AB, DO-5, Stud
- Supplier Device Package：DO-5
- Operating Temperature - Junction：-65°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor 1N5827 is a silicon power Schottky diode designed for stud mounting applications. It features a maximum repetitive peak reverse voltage of 40 V and a continuous forward current rating of 15 A. The device exhibits a maximum DC blocking voltage of 40 V and an RMS reverse voltage of 28 V. Electrical characteristics include a maximum forward voltage of 0.5 V at 15 A and a maximum reverse current of 10 mA at 20 V and 125 °C. Thermal resistance from junction to case is specified at 0.47 °C/W. The component supports a surge non-repetitive forward current of 300 A under half-sine wave conditions.
Feature Summary
- High surge current capability suitable for demanding power environments
- Not sensitive to electrostatic discharge events
- Standard polarity configuration with the stud terminal serving as the cathode
Applications
- Stud mount rectification in high-current circuits
- Free-wheeling diodes in switching power supplies
- Polarity protection in low-voltage systems
Procurement Notes
Verify the specific voltage variant, as the datasheet covers a range up to 40 V. Confirm the terminal configuration matches the standard cathode-stud design. Ensure thermal management solutions align with the specified junction-to-case thermal resistance. Check for RoHS compliance status if required by the manufacturing process.
Selection Notes
Select this component when a robust stud-mount Schottky rectifier is required for currents up to 15 A. The low forward voltage drop aids in efficiency, while the high surge rating provides resilience against transient loads. Consider the DO-4 package dimensions for mechanical integration and verify that the operating temperature range meets the system's environmental requirements.
Part Context
This part belongs to the 1N5826 through 1N5828R series of silicon power Schottky diodes. The series utilizes a DO-4 package style optimized for stud mounting. The 'R' suffix denotes devices with reversed polarity where the stud acts as the anode, whereas the standard 1N5827 maintains the stud as the cathode.
Replacement Considerations
Cross-reference with other 1N5827 variants from different manufacturers to ensure pinout compatibility. Verify that substitute parts maintain the same stud mounting orientation and thermal resistance values to avoid redesigning the heatsink interface.
