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The GeneSiC Semiconductor 1N5828 is a silicon Schottky rectifier in the DO-4 stud mount package. It features a repetitive peak reverse voltage of 40 V and a continuous forward current rating of 15 A. The device exhibits a maximum forward voltage of 1.8 V at 15 A and 25 °C, with a typical reverse leakage current of 10 mA at 125 °C. Thermal resistance from junction to case is specified at 0.5 °C/W. The component supports an operating temperature range from -55 °C to +150 °C.
Verify the specific suffix designation when ordering. Standard versions utilize a cathode stud, while R-designated variants feature reversed polarity with an anode stud. Confirm the required terminal configuration matches the circuit design before procurement to ensure correct installation and electrical connectivity.
Select this component for applications requiring high current density and low forward voltage drop. The stud mount package facilitates direct mounting to heat sinks. Ensure the thermal interface material and mounting torque meet specifications to maintain the rated junction-to-case thermal performance under continuous load conditions.
This part belongs to the 1N5826 through 1N5828R series of silicon Schottky diodes. The series offers varying reverse voltage ratings from 20 V to 40 V while maintaining consistent current and thermal characteristics. These devices are designed for general-purpose rectification where efficiency and surge tolerance are critical requirements.
Direct substitutes within the same series include the 1N5826 and 1N5827 for lower voltage ratings. For identical 40 V specifications, verify compatibility with the 1N5828R variant if reversed polarity (anode stud) is required instead of the standard cathode stud configuration.