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The GeneSiC Semiconductor 1N5828R is a silicon power Schottky rectifier in the DO-4 stud-mount package. It features a 40 V repetitive peak reverse voltage and a 15 A continuous forward current rating. The device exhibits a maximum forward voltage of 750 mV at 15 A and supports a 600 A non-repetitive surge current. Operating junction temperature ranges from -55 °C to +150 °C. The 'R' suffix indicates reversed polarity where the stud functions as the anode.
Verify the specific part marking and datasheet revision to confirm the reversed polarity configuration associated with the 'R' suffix. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance. Confirm that the stud mounting interface matches the mechanical requirements of the heat sink assembly.
Select this component when a 40 V blocking voltage and 15 A continuous current are required in a stud-mount form factor. The reversed polarity variant is suitable for designs requiring the stud terminal to serve as the anode connection. Consider the thermal resistance characteristics for proper heatsink sizing.
This device belongs to the 1N5826 through 1N5828R series of silicon power Schottky diodes. The series offers varying reverse voltage ratings from 20 V to 40 V while maintaining a consistent 15 A forward current capacity across all variants in the family.
Direct substitutes within the same series include the 1N5826R and 1N5827R, which share identical current ratings but differ in reverse voltage specifications.