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The GeneSiC Semiconductor 1N5829R is a silicon power Schottky diode in a DO-4 stud mount package. It features a 25 A continuous forward current and a repetitive peak reverse voltage of 20 V. The device has a maximum forward voltage of 0.58 V at 25 A and a thermal resistance of 1.8 °C/W. The 'R' suffix indicates reversed polarity where the stud serves as the anode. Operating temperature ranges from -55 °C to +150 °C.
Verify the specific electrical ratings against the official datasheet before procurement, particularly noting the 20 V reverse voltage limit for this variant. Confirm the reversed polarity orientation (stud as anode) matches the circuit design requirements. Ensure mounting hardware accommodates the DO-4 package dimensions and thermal interface specifications.
Select this component for applications requiring high current handling with low forward voltage drop. The reversed polarity option is suitable for designs where the stud must serve as the positive terminal. Consider the thermal resistance and operating temperature range when designing heat dissipation solutions for the stud mount configuration.
This part belongs to the 1N5829 through 1N5831R series of silicon power Schottky rectifiers manufactured by GeneSiC Semiconductor. These devices are designed for stud mounting in industrial and automotive power electronics. The series offers various voltage ratings while maintaining consistent current handling capabilities.
Direct replacements include other 1N5829 variants from different manufacturers, provided they match the 25 A current rating, 20 V reverse voltage, and DO-4 package dimensions. Verify that substitute parts also feature reversed polarity if the stud-anode configuration is required.