1N5829R

1N5829R

$10.54
  • Description:DIODE SCHOTTKY REV 20V 25A DO4
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk

SKU:29b9b016174c Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:DIODE SCHOTTKY REV 20V 25A DO4
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Technology:Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max):20 V
  • Current - Average Rectified (Io):25A
  • Voltage - Forward (Vf) (Max) @ If:580 mV @ 25 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:2 mA @ 20 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Chassis, Stud Mount
  • Package / Case:DO-203AA, DO-4, Stud
  • Supplier Device Package:DO-4
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Grade:-
  • Qualification:-

Download product information

1N5829R

Overview

The GeneSiC Semiconductor 1N5829R is a silicon power Schottky diode in a DO-4 stud mount package. It features a 25 A continuous forward current and a repetitive peak reverse voltage of 20 V. The device has a maximum forward voltage of 0.58 V at 25 A and a thermal resistance of 1.8 °C/W. The 'R' suffix indicates reversed polarity where the stud serves as the anode. Operating temperature ranges from -55 °C to +150 °C.

Feature Summary

  • High surge capability for robust performance under transient conditions
  • Reversed polarity configuration with stud terminal functioning as the anode
  • Not sensitive to electrostatic discharge

Applications

  • Low voltage high frequency inverters
  • Free wheeling applications
  • Polarity protection circuits
  • Small battery chargers

Procurement Notes

Verify the specific electrical ratings against the official datasheet before procurement, particularly noting the 20 V reverse voltage limit for this variant. Confirm the reversed polarity orientation (stud as anode) matches the circuit design requirements. Ensure mounting hardware accommodates the DO-4 package dimensions and thermal interface specifications.

Selection Notes

Select this component for applications requiring high current handling with low forward voltage drop. The reversed polarity option is suitable for designs where the stud must serve as the positive terminal. Consider the thermal resistance and operating temperature range when designing heat dissipation solutions for the stud mount configuration.

Part Context

This part belongs to the 1N5829 through 1N5831R series of silicon power Schottky rectifiers manufactured by GeneSiC Semiconductor. These devices are designed for stud mounting in industrial and automotive power electronics. The series offers various voltage ratings while maintaining consistent current handling capabilities.

Replacement Considerations

Direct replacements include other 1N5829 variants from different manufacturers, provided they match the 25 A current rating, 20 V reverse voltage, and DO-4 package dimensions. Verify that substitute parts also feature reversed polarity if the stud-anode configuration is required.

1N5829R1N5829R
$10.54
Buy Now