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Product Detailed Parameters
- Description：DIODE SCHOTTKY 25V 25A DO4
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：25 V
- Current - Average Rectified (Io)：25A
- Voltage - Forward (Vf) (Max) @ If：580 mV @ 25 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：2 mA @ 20 V
- Capacitance @ Vr, F：-
- Mounting Type：Chassis, Stud Mount
- Package / Case：DO-203AA, DO-4, Stud
- Supplier Device Package：DO-4
- Operating Temperature - Junction：-55°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor 1N5830 is a silicon Schottky rectifier housed in a DO-4 (DO-203AA) stud-mount package. It features a maximum repetitive peak reverse voltage of 20 V and a continuous forward current rating of 25 A. The device supports a surge non-repetitive forward current of 800 A under half-sine wave conditions. Electrical characteristics include a maximum DC blocking voltage of 17 V and a thermal resistance from junction to case of 1.8 °C/W. The component operates within a temperature range of -55 °C to 150 °C.
Feature Summary
- High surge current capability for transient load handling
- Stud-mounted configuration with standard cathode polarity
- Low forward voltage drop for improved efficiency
Applications
- Free-wheeling diodes in power conversion circuits
- General purpose rectification in low-voltage systems
- Efficiency optimization in high-current applications
Procurement Notes
Verify the specific manufacturer source, as production data indicates potential discontinuation or transition between suppliers such as GeneSiC and Navitas. Confirm the exact terminal configuration (standard vs. reversed polarity) required for your design, as the datasheet distinguishes between standard stud-cathode and reversed stud-anode variants. Ensure compliance with RoHS requirements before finalizing procurement orders.
Selection Notes
Select this component for applications requiring robust high-current handling in a stud-mount form factor. The 25 A continuous rating and 800 A surge capacity make it suitable for heavy-duty rectification tasks. Consider the 1.8 °C/W thermal resistance when designing heatsinking solutions to maintain junction temperatures within the specified operating limits during continuous operation.
Part Context
This part belongs to the 1N5829 through 1N5831R series of silicon power Schottky diodes. These components are designed for high-efficiency rectification in industrial and automotive environments. The series utilizes a rugged DO-4 package to facilitate direct mounting to chassis or heat sinks, ensuring reliable thermal management for high-power density designs.
Replacement Considerations
Compatible substitutes within the same series include the 1N5829 and 1N5831. Verify that replacement parts match the specific voltage rating and polarity configuration (standard or reversed) required by the circuit design to ensure functional equivalence.
