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Product Detailed Parameters
- Description：DIODE SCHOTTKY REV 25V 25A DO4
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Technology：Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max)：25 V
- Current - Average Rectified (Io)：25A
- Voltage - Forward (Vf) (Max) @ If：580 mV @ 25 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：2 mA @ 20 V
- Capacitance @ Vr, F：-
- Mounting Type：Chassis, Stud Mount
- Package / Case：DO-203AA, DO-4, Stud
- Supplier Device Package：DO-4
- Operating Temperature - Junction：-55°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor 1N5830R is a silicon Schottky rectifier in the DO-4 package. It features a 25 A continuous forward current and a 20 V repetitive peak reverse voltage. The device has a maximum forward voltage of 0.58 V at 25 A and a reverse leakage current of 250 mA at 125 °C. Thermal resistance from junction to case is 1.8 °C/W. Operating temperature ranges from -55 °C to +150 °C.
Feature Summary
- High surge capability with an 800 A non-repetitive forward current rating
- Reverse polarity configuration where the stud terminal functions as the anode
- Low forward voltage drop characteristic typical of Schottky technology
Applications
- Power supply rectification circuits
- Free-wheeling diodes in inductive load switching
- DC-to-DC converter output stages
Procurement Notes
Verify the specific suffix 'R' indicates reversed polarity during procurement, as this alters terminal function compared to standard versions. Confirm the manufacturer designation matches GeneSiC Semiconductor or Navitas Semiconductor records. Ensure the DO-4 package dimensions align with the mounting hardware requirements for the intended application design.
Selection Notes
Select this component when a low forward voltage drop is required for high efficiency at 25 A. The 20 V rating suits low-voltage DC systems. Consider the stud mount style for thermal management needs. Verify that the 1.8 °C/W thermal resistance meets the heat dissipation requirements of the enclosure design under expected operating conditions.
Part Context
This part belongs to the 1N5829 through 1N5831R series of silicon power Schottky diodes. These devices utilize a stud mount construction for robust mechanical attachment and efficient heat transfer. The series covers various voltage ratings within the 20 V to 40 V range while maintaining a consistent 25 A current capacity across the family.
Replacement Considerations
Standard 1N5830 units feature a cathode stud, whereas the 1N5830R has an anode stud. Direct substitution requires verifying circuit polarity alignment. Other series members like 1N5829R share identical electrical ratings but differ in voltage specifications.
