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Product Detailed Parameters
- Description：DIODE SCHOTTKY 20V 40A DO5
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：20 V
- Current - Average Rectified (Io)：40A
- Voltage - Forward (Vf) (Max) @ If：520 mV @ 40 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：20 mA @ 10 V
- Capacitance @ Vr, F：-
- Mounting Type：Chassis, Stud Mount
- Package / Case：DO-203AB, DO-5, Stud
- Supplier Device Package：DO-5
- Operating Temperature - Junction：-65°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor 1N5832 is a silicon power Schottky diode housed in a DO-5 (DO-203AB) stud mount package. It features a repetitive peak reverse voltage of 20 V and an average forward current rating of 40 A per package. The device supports a peak forward surge current of 800 A for half-sine pulses lasting 8.3 ms. Electrical characteristics include a maximum instantaneous forward voltage of 0.70 V at 40 A with the junction at 25 °C, rising to 1.45 V at 100 °C. Maximum thermal resistance from junction to case is specified at 1.45 °C/W when the case temperature is maintained at 125 °C.
Feature Summary
- High surge capability designed for robust transient handling
- Standard polarity configuration where the stud serves as the cathode
- Stud base construction facilitates direct mounting to heatsinks
Applications
- Low voltage high frequency inverters
- Free wheeling applications
- Polarity protection circuits
- Small battery chargers
Procurement Notes
Verify the specific terminal configuration upon receipt, as standard units feature a cathode stud while reverse polarity variants exist. Confirm compliance with RoHS directives if required by the design specification. Ensure the mounting torque does not exceed the mechanical limits defined in the datasheet to prevent package damage during installation.
Selection Notes
Select this component for applications requiring low forward voltage drop and fast switching speeds in high current environments. The DO-5 package allows for efficient thermal dissipation through direct chassis mounting. Consider the 20 V reverse voltage rating to ensure adequate margin against circuit transients.
Part Context
This part belongs to the 1N5832 through 1N5834R series of silicon power Schottky rectifiers manufactured by GeneSiC Semiconductor. The series utilizes a single-phase, single-element configuration optimized for efficiency in power conversion systems.
Replacement Considerations
Cross-reference with other manufacturers offering equivalent DO-5 packaged Schottky diodes rated for 40 A and 20 V. Verify that substitute parts match the thermal resistance and physical mounting dimensions for compatibility.
FAQ
What is the default polarity configuration for the 1N5832?
The standard polarity configuration has the stud serving as the cathode.
How does the forward voltage change with temperature?
The maximum instantaneous forward voltage increases from 0.70 V at a junction temperature of 25 °C to 1.45 V at 100 °C under a 40 A load.
