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Product Detailed Parameters
- Description：DIODE SCHOTTKY 30V 40A DO5
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：30 V
- Current - Average Rectified (Io)：40A
- Voltage - Forward (Vf) (Max) @ If：550 mV @ 40 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：20 mA @ 10 V
- Capacitance @ Vr, F：-
- Mounting Type：Chassis, Stud Mount
- Package / Case：DO-203AB, DO-5, Stud
- Supplier Device Package：DO-5
- Operating Temperature - Junction：-65°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor 1N5833 is a silicon power Schottky diode housed in a DO-5 stud mount package. It features a repetitive peak reverse voltage of 30 V and an average forward current rating of 40 A per package. The device supports a peak forward surge current of 800 A under half-sine wave conditions. Maximum instantaneous forward voltage is specified at 0.70 V when the junction temperature is 25 °C and the forward current is 40 A. Reverse leakage current is limited to 1 mA at rated DC blocking voltage with a junction temperature of 25 °C. The component operates within a junction temperature range of -55 °C to 150 °C.
Feature Summary
- High surge capability for handling transient current loads
- Low forward voltage drop for improved efficiency
- Not sensitive to electrostatic discharge
Applications
- Free wheeling applications
- Polarity protection circuits
- Low voltage high frequency inverters
Procurement Notes
Verify the specific part number suffix against official documentation, as variants exist with reversed polarity where the stud functions as the anode rather than the cathode. Confirm that the procurement source provides the correct datasheet version corresponding to the ordered configuration to ensure accurate terminal identification and mounting requirements are met during integration.
Selection Notes
Select this component for designs requiring robust current handling in low-voltage environments. The DO-5 stud mount form factor facilitates direct thermal coupling to heatsinks. Ensure the circuit design accounts for the maximum thermal resistance from junction to case to maintain safe operating temperatures under continuous load conditions and verify compatibility with the required mounting torque specifications.
Part Context
This device belongs to the 1N5832 through 1N5834R series of silicon power Schottky rectifiers manufactured by GeneSiC Semiconductor. The series shares common mechanical dimensions and thermal characteristics while varying primarily in their voltage ratings. These components are engineered for high-efficiency rectification in industrial and commercial power conversion systems.
Replacement Considerations
Cross-reference with 1N5832 or 1N5834 only if voltage ratings align with system requirements. Verify polarity orientation carefully, as 'R' suffix devices feature reversed studs compared to standard configurations.
