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Product Detailed Parameters
- Description：DIODE SCHOTTKY 40V 40A DO5
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：40 V
- Current - Average Rectified (Io)：40A
- Voltage - Forward (Vf) (Max) @ If：590 mV @ 40 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：20 mA @ 10 V
- Capacitance @ Vr, F：-
- Mounting Type：Chassis, Stud Mount
- Package / Case：DO-203AB, DO-5, Stud
- Supplier Device Package：DO-5
- Operating Temperature - Junction：-65°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor 1N5834 is a silicon power Schottky rectifier housed in a DO-5 stud mount package. It features a repetitive peak reverse voltage of 40 V and an average forward current rating of 40 A per package. The device supports a peak forward surge current of 800 A for half-sine pulses. Maximum instantaneous forward voltage is specified at 0.70 V under rated conditions. Operating temperature ranges from -55 °C to +150 °C junction temperature.
Feature Summary
- High surge current capability designed for robust transient handling
- Standard polarity configuration with the stud terminal serving as the cathode
- Not sensitive to electrostatic discharge events
Applications
- Free wheeling diode circuits
- Low voltage high frequency inverters
- Polarity protection systems
- Small battery chargers
Procurement Notes
Verify the specific datasheet version and manufacturer documentation before integration, as component specifications may vary between production batches or supplier sources. Confirm that the thermal management design accommodates the maximum junction temperature limits and thermal resistance values provided in the official technical data sheets for reliable operation.
Selection Notes
Select this component when a single-phase silicon Schottky rectifier with stud mounting is required for high current applications. Ensure the system voltage does not exceed the 40 V repetitive peak reverse voltage rating. Verify that the mechanical mounting torque requirements align with the DO-5 package specifications and that the operating environment stays within the defined temperature range.
Part Context
This part belongs to the 1N58 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series includes variants with different reverse voltage ratings, such as the 1N5832 and 1N5833. These devices are engineered for efficiency in low voltage power conversion applications requiring fast switching characteristics and low conduction losses.
Replacement Considerations
Direct substitutes include other 1N5834 variants from different manufacturers offering identical electrical ratings and DO-5 packaging. Verify pinout compatibility and thermal resistance parameters when cross-referencing with equivalent parts from other suppliers.
