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Product Detailed Parameters
- Description：DIODE SCHOTTKY REV 40V 40A DO5
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Technology：Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max)：40 V
- Current - Average Rectified (Io)：40A
- Voltage - Forward (Vf) (Max) @ If：590 mV @ 40 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：20 mA @ 10 V
- Capacitance @ Vr, F：-
- Mounting Type：Chassis, Stud Mount
- Package / Case：DO-203AB, DO-5, Stud
- Supplier Device Package：DO-5
- Operating Temperature - Junction：-65°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor 1N5834R is a silicon power Schottky diode housed in a DO-5 stud mount package. It features a maximum repetitive peak reverse voltage of 40 V and an average forward current rating of 40 A per package. The device supports a peak forward surge current of 800 A. Electrical characteristics include a maximum instantaneous forward voltage of 0.70 V at Tj = 25 °C and 1.45 V at Tj = 100 °C with IF = 40 A. Maximum thermal resistance from junction to case is 1.0 °C/W. The component operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- High surge current capability for robust transient handling
- Low forward voltage drop for reduced conduction losses
- Not sensitive to electrostatic discharge
Applications
- Low voltage high frequency inverters
- Free wheeling circuits
- Polarity protection applications
- Small battery chargers
Procurement Notes
Verify the specific part number suffix against official documentation, as the 'R' designation indicates reversed polarity where the stud functions as the anode rather than the standard cathode configuration. Confirm mounting torque specifications and thermal interface requirements during integration. Ensure that the selected component matches the required voltage and current ratings for the intended circuit design before procurement.
Selection Notes
Select this component when a stud-mount Schottky rectifier with high current capacity is required. The 1N5834R variant is specifically chosen for applications necessitating reversed polarity orientation compared to standard versions. Consider the thermal resistance and operating temperature range when designing heat dissipation solutions. Verify compatibility with existing PCB or chassis mounting hardware due to the specific DO-5 package dimensions.
Part Context
This component belongs to the 1N5832 through 1N5834R series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series offers various voltage ratings from 20 V to 40 V while maintaining a consistent 40 A average forward current capability. These devices are designed for high-efficiency power conversion applications requiring low switching losses and high reliability in demanding environments.
Replacement Considerations
Standard 1N5834 variants without the 'R' suffix can be used if polarity orientation allows, noting the stud becomes the cathode instead of the anode. Other members of the 1N5832-1N5834R series may serve as alternatives if different voltage ratings suit the application requirements.
