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The Microchip Technology 1N6076US/TR is a surface-mount ultrafast recovery rectifier diode rated for 50 V peak reverse voltage and 6.0 A average forward current at 70°C case temperature. It features a maximum forward voltage of 1.76 V at 18.8 A and a reverse recovery time of 30 ns. The device supports a peak forward surge current of 75 A and operates within a junction temperature range of -65°C to +155°C. Packaged in the SQ-MELF (D-5B) format with SMD/SMT termination, it utilizes voidless hermetically sealed glass construction.
Verify the specific datasheet revision and manufacturer origin, as the component history involves transitions between Microsemi and Microchip Technology. Confirm that the TR suffix indicates tape and reel packaging per EIA-481-B standards. Ensure compliance requirements match the intended application environment, particularly regarding the tin/lead finish on copper end caps.
Select this component when a surface-mount ultrafast rectifier is required for 50 V circuits carrying up to 6 A continuous current. The D-5B package offers lower thermal resistance compared to smaller variants. Consider the 30 ns reverse recovery time for efficiency in high-frequency switching topologies where low forward loss is critical.
This device belongs to the 1N6073US through 1N6081US series of voidless hermetically sealed surface mount ultrafast recovery glass power rectifiers. The series provides options for various current ratings from 3 A to 12 A and reverse voltages from 50 V to 150 V. The 1N6076US specifically occupies the 6 A rating tier within Package E (D-5B).
Axial-leaded equivalents are available by removing the US suffix, such as the 1N6076. Other series members like 1N6077US or 1N6078US share identical electrical characteristics but differ in reverse voltage ratings.