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The 1N6079/TR is a fast recovery rectifier diode manufactured by Microchip Technology. It features a 50 V reverse voltage rating and a 2 A average forward current. The device exhibits a maximum forward voltage of 1.5 V at rated current and a reverse leakage current of 10 µA. Key electrical parameters include a 30 ns recovery time, a surge forward current capacity of 175 A, and an operating junction temperature range up to 175 °C. Packaged in an axial leaded case for through-hole mounting.
Verify the specific datasheet version for the 1N6079/TR to confirm exact electrical tolerances and mechanical dimensions. Ensure the axial package style matches the target PCB footprint. Confirm RoHS compliance status as indicated in the manufacturer's documentation before integration into regulated assemblies.
Select this component for applications requiring fast recovery speeds and high thermal endurance. The 50 V rating suits low-voltage DC systems. Verify that the 2 A continuous current meets load requirements and that the 1.5 V forward voltage drop aligns with efficiency targets. Ensure the axial package fits the assembly constraints.
This part belongs to the standard rectifier diode category from Microchip Technology. It utilizes the 1N series numbering convention for general-purpose silicon rectifiers. The '/TR' suffix indicates tape and reel packaging for automated surface or through-hole placement processes.
Cross-reference with other 50 V, 2 A fast recovery diodes in axial packages. Verify matching recovery time, forward voltage, and thermal ratings when substituting.