1N6080US

1N6080US

$33.92
  • Description:DIODE STANDARD 100V 2A GMELF
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk

SKU:40120859bce1 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE STANDARD 100V 2A GMELF
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io):2A
  • Voltage - Forward (Vf) (Max) @ If:1.5 V @ 37.7 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):30 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 100 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Surface Mount
  • Package / Case:SQ-MELF, G
  • Supplier Device Package:G-MELF (D-5C)
  • Operating Temperature - Junction:-65°C ~ 155°C

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1N6080US

Overview

The Microchip Technology 1N6080US is a surface-mount ultrafast recovery rectifier diode featuring voidless hermetically sealed glass construction. It operates with a working peak reverse voltage of 100 V and an average rectified forward current of 12 A at TEC = +70°C. The device exhibits a maximum forward voltage of 1.50 V, a maximum reverse current of 10.0 µA, and a maximum reverse recovery time of 30 ns. It supports a peak forward surge current of 175 A and functions within a junction temperature range of -65°C to +155°C.

Feature Summary

  • Hermetically sealed voidless hard glass package with tungsten slugs for high-reliability environments
  • Ultrafast recovery characteristics suitable for applications requiring extremely fast switching and low forward loss
  • Internal Category I metallurgical bonds and triple-layer passivation for robust construction

Applications

  • Military and other high-reliability applications where failure cannot be tolerated
  • Switching power supplies requiring fast switching capabilities
  • Circuits demanding controlled avalanche performance with peak reverse power capability

Procurement Notes

Verify the specific manufacturer source, as historical production involved Microsemi Scottsdale Division. Confirm compliance requirements such as RoHS status, which may vary by production batch. Ensure the ordering suffix matches the required surface mount package configuration. Check for available military screening prefixes if JAN, JANTX, or JANS specifications are necessary for the intended application environment.

Selection Notes

Select this component when high reliability and radiation hardness are critical design factors. The G-MELF (D-5C) package provides lower thermal resistance compared to smaller variants, supporting higher continuous current ratings. Consider the 100 V reverse voltage rating against circuit peak voltages. Evaluate the 30 ns reverse recovery time against switching frequency requirements to ensure minimal switching losses in the target topology.

Part Context

This part belongs to the 1N6073US through 1N6081US series of ultrafast recovery rectifiers. The series offers varying current ratings from 3 A to 12 A and reverse voltages from 50 V to 150 V. All devices share the same voidless hermetically sealed glass construction and internal metallurgical bond technology designed for extreme durability in harsh operating conditions.

Replacement Considerations

Axial-leaded equivalents are available by removing the US suffix, designated as 1N6080. Other series members like 1N6079US or 1N6081US offer different current or voltage ratings but share similar package and construction features.

1N6080US1N6080US
$33.92
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