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The Microchip Technology 1N6080US is a surface-mount ultrafast recovery rectifier diode featuring voidless hermetically sealed glass construction. It operates with a working peak reverse voltage of 100 V and an average rectified forward current of 12 A at TEC = +70°C. The device exhibits a maximum forward voltage of 1.50 V, a maximum reverse current of 10.0 µA, and a maximum reverse recovery time of 30 ns. It supports a peak forward surge current of 175 A and functions within a junction temperature range of -65°C to +155°C.
Verify the specific manufacturer source, as historical production involved Microsemi Scottsdale Division. Confirm compliance requirements such as RoHS status, which may vary by production batch. Ensure the ordering suffix matches the required surface mount package configuration. Check for available military screening prefixes if JAN, JANTX, or JANS specifications are necessary for the intended application environment.
Select this component when high reliability and radiation hardness are critical design factors. The G-MELF (D-5C) package provides lower thermal resistance compared to smaller variants, supporting higher continuous current ratings. Consider the 100 V reverse voltage rating against circuit peak voltages. Evaluate the 30 ns reverse recovery time against switching frequency requirements to ensure minimal switching losses in the target topology.
This part belongs to the 1N6073US through 1N6081US series of ultrafast recovery rectifiers. The series offers varying current ratings from 3 A to 12 A and reverse voltages from 50 V to 150 V. All devices share the same voidless hermetically sealed glass construction and internal metallurgical bond technology designed for extreme durability in harsh operating conditions.
Axial-leaded equivalents are available by removing the US suffix, designated as 1N6080. Other series members like 1N6079US or 1N6081US offer different current or voltage ratings but share similar package and construction features.