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The 1N6081US/TR is a surface-mount ultra-fast recovery rectifier manufactured by Microchip Technology. It features a glass-passivated junction and utilizes the SQ-MELF (G-MELF) package for compact mounting. The device is rated for a maximum repetitive peak reverse voltage of 150 V and an average forward rectified current of 2 A. Key electrical characteristics include a low forward voltage drop of 1.5 V at 37.7 A and a very short reverse recovery time of 30 ns. The component supports a wide operating junction temperature range from -65°C to +155°C, ensuring reliability in demanding thermal environments.
Verify the specific suffix 'TR' indicates tape-and-reel packaging when ordering. Confirm RoHS compliance status through official datasheets as regulations vary by region. Ensure the SQ-MELF footprint matches PCB design requirements before finalizing procurement plans.
Select this component for applications requiring fast switching speeds and high thermal resilience. The 150 V rating suits low-voltage DC-DC converters and battery-powered systems. Compare the 30 ns reverse recovery time against standard diodes to evaluate efficiency gains in high-frequency topologies.
This part belongs to the 1N60xxUS series of ultra-fast recovery rectifiers from Microchip. These devices are engineered for high-reliability applications where standard recovery times cause excessive heat or noise. The US designation typically denotes the specific glass-passivated construction method used across this product family.
Cross-reference with other 1N60xxUS variants such as 1N6073US or 1N6080/TR if voltage or current ratings differ. Verify that substitute components maintain the same SQ-MELF package dimensions and 30 ns reverse recovery specifications to ensure circuit compatibility.