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Product Detailed Parameters
- Description：DIODE STANDARD 150V 2A GMELF
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：150 V
- Current - Average Rectified (Io)：2A
- Voltage - Forward (Vf) (Max) @ If：1.5 V @ 37.7 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：30 ns
- Current - Reverse Leakage @ Vr：10 µA @ 150 V
- Capacitance @ Vr, F：-
- Mounting Type：Surface Mount
- Package / Case：SQ-MELF, G
- Supplier Device Package：G-MELF (D-5C)
- Operating Temperature - Junction：-65°C ~ 155°C
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Overview
The Microchip Technology 1N6081US is a surface-mount ultrafast recovery glass power rectifier designed for high-reliability applications. It features a working peak reverse voltage of 150 V and an average rectified forward current of 2.0 A at TA=55°C (12.0 A at TEC=70°C). The device exhibits a maximum reverse recovery time of 30 ns and a peak forward surge current capability of 175 A. It utilizes a G-MELF (D-5C) package with voidless hermetic sealing.
Feature Summary
- Voidless hermetically sealed glass construction with internal Category I metallurgical bonds
- Ultrafast recovery characteristics suitable for extremely fast switching applications
- Triple-layer passivation for enhanced robustness
- Inherently radiation hard design
Applications
- Military and other high-reliability applications
- Switching power supplies requiring low forward loss
- Applications demanding controlled avalanche with peak reverse power capability
Procurement Notes
Verify the specific package variant, as the datasheet indicates Package G corresponds to the 1N6079US through 1N6081US series within the D-5C outline. Confirm RoHS compliance status, as historical data suggests non-compliance for this component line. Ensure ordering suffixes match the required screening levels if military specifications are needed.
Selection Notes
Select the 1N6081US when a 150 V reverse voltage rating is required alongside ultrafast recovery performance. This part is appropriate for designs needing high surge current handling (175 A) and low thermal resistance (5.0°C/W). Consider the surface mount G-MELF package for compact layouts where hermetic sealing is critical.
Part Context
This component belongs to the 1N6073US through 1N6081US series of ultrafast recovery rectifiers manufactured by Microchip Technology's Scottsdale Division. The series offers various current ratings from 3A to 12A and voltage ratings from 50V to 150V across different surface mount packages.
Replacement Considerations
Axial-leaded equivalents such as 1N6081 are available by deleting the US suffix. For screened military versions, prefixes like MX or MV may be used (e.g., MX6081). Verify pinout and thermal requirements when substituting with other ultrafast diodes.
