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Product Detailed Parameters
- Description：DIODE SCHOTTKY 30V 50A DO5
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：30 V
- Current - Average Rectified (Io)：50A
- Voltage - Forward (Vf) (Max) @ If：700 mV @ 50 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：5 mA @ 30 V
- Capacitance @ Vr, F：-
- Mounting Type：Chassis, Stud Mount
- Package / Case：DO-203AB, DO-5, Stud
- Supplier Device Package：DO-5
- Operating Temperature - Junction：-65°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor 1N6097 is a silicon power Schottky diode housed in a DO-5 (DO-203AB) stud-mount package. It features a repetitive peak reverse voltage of 30 V and an average forward current rating of 50 A per package. The device exhibits a maximum instantaneous forward voltage of 0.7 V at 50 A and 25 °C, with a maximum thermal resistance from junction to case of 1.30 °C/W. Operating temperature ranges from -55 °C to 150 °C, and it supports a peak forward surge current of 800 A for an 8.3 ms half-sine wave.
Feature Summary
- High surge current capability
- Stud terminal configuration for base mounting
Applications
- Power rectification in high-current circuits
- Industrial power supplies
- DC-DC converter output stages
Procurement Notes
Verify the specific part marking against the datasheet to confirm the 1N6097 designation and standard polarity configuration. Ensure the mounting surface preparation meets the thermal interface requirements specified for the DO-5 package. Confirm that the application environment stays within the -55 °C to 150 °C junction temperature limits during operation.
Selection Notes
Select this component when a low forward voltage drop is required for high-efficiency rectification at 50 A. The DO-5 stud package facilitates direct heatsink attachment for effective thermal management. Consider the 30 V reverse voltage rating to ensure adequate margin for the specific circuit's peak inverse voltage conditions.
Part Context
This component belongs to the 1N6097 through 1N6098R series of silicon power Schottky diodes. The series offers voltage ratings ranging from 30 V to 40 V. The 'R' suffix indicates a reversed polarity variant where the stud functions as the anode instead of the cathode.
Replacement Considerations
Check for compatible 30 V, 50 A Schottky diodes in the DO-5 stud package. Verify that any substitute matches the 1.30 °C/W thermal resistance and 800 A surge current specifications.
FAQ
What is the polarity configuration of the 1N6097?
The standard polarity configuration has the stud serving as the cathode.
How does the 1N6097 handle transient currents?
It supports a peak forward surge current of 800 A for an 8.3 ms half-sine wave duration.
