ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE SCHOTTKY REV 40V 50A DO5
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Technology：Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max)：40 V
- Current - Average Rectified (Io)：50A
- Voltage - Forward (Vf) (Max) @ If：700 mV @ 50 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：5 mA @ 30 V
- Capacitance @ Vr, F：-
- Mounting Type：Chassis, Stud Mount
- Package / Case：DO-203AB, DO-5, Stud
- Supplier Device Package：DO-5
- Operating Temperature - Junction：-65°C ~ 150°C
- Grade：-
- Qualification：-
Download product information
Overview
The GeneSiC Semiconductor 1N6098R is a silicon power Schottky rectifier housed in the DO-5 (DO-203AB) stud-mount package. It features a maximum repetitive peak reverse voltage of 40 V and an average forward current rating of 50 A per package. The device supports a peak forward surge current of 800 A for half-sine pulses lasting 8.3 ms. Electrical characteristics include a maximum instantaneous forward voltage of 0.7 V at 50 A and a maximum instantaneous reverse current of 1 mA at rated DC blocking voltage. The component operates within a junction temperature range of -55 °C to 150 °C, with a maximum thermal resistance from junction to case of 1.30 °C/W.
Feature Summary
- High surge current capability designed for demanding transient conditions
- Non-sensitive to electrostatic discharge for simplified handling
- Reverse polarity configuration where the stud terminal functions as the anode
Applications
- High-current DC power supply circuits
- Industrial motor drive rectification stages
- Battery charging systems requiring robust surge tolerance
Procurement Notes
Verify that the specific part number suffix indicates the reverse polarity configuration, ensuring the stud terminal serves as the anode rather than the cathode. Confirm the manufacturer designation matches GeneSiC Semiconductor or its authorized production lines to ensure compliance with the specified electrical ratings and physical dimensions provided in the official documentation.
Selection Notes
Select this component when a high-current rectifier with a 40 V reverse voltage rating is required in a stud-mount form factor. The reverse polarity design allows for flexible circuit integration where the chassis connection must serve as the positive input. Ensure the cooling solution can maintain the junction temperature below 150 °C under maximum load conditions given the specified thermal resistance.
Part Context
This device belongs to the 1N6097 through 1N6098R series of silicon power Schottky diodes. The series offers variants with different reverse voltage ratings, specifically 30 V and 40 V options. The standard versions utilize a cathode-stud configuration, while the 'R' suffix denotes the reverse polarity variant with an anode-stud configuration, all sharing identical electrical performance metrics.
Replacement Considerations
Direct substitutes within the same series include the 1N6097R for applications requiring a 30 V reverse voltage rating instead of 40 V. Other members of the 1N6097/1N6098 family may be considered if the polarity requirement aligns with the standard cathode-stud configuration.
