1N6263 TR

Overview

The Central Semiconductor Corp 1N6263 TR is a single-element silicon Schottky rectifier diode housed in the DO-35 glass axial leaded package. It features a maximum average forward rectified current of 0.015 A and a maximum repetitive peak reverse voltage of 60 V. The device utilizes a metal-to-silicon junction protected by a PN junction guard ring, providing low forward voltage drop and fast switching characteristics suitable for general-purpose applications.

Feature Summary

• Metal-to-silicon Schottky barrier construction with PN junction guard ring protection
• Low forward voltage drop and fast switching performance
• DO-35 glass axial leaded package configuration

Applications

• Protection of MOS devices
• Steering and biasing circuits
• Coupling diodes for fast switching and low logic level applications

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm plating type and packaging format. Confirm that the requested variant matches the exact electrical specifications and mechanical dimensions required for the design. Ensure compliance with applicable environmental regulations before finalizing procurement orders.

Selection Notes

Select this component for designs requiring small signal Schottky rectification within the DO-35 form factor. Evaluate the 60 V reverse voltage rating and 15 mA current capacity against circuit requirements. Consider the low forward voltage drop and fast switching speed for high-frequency or sensitive logic interface applications.

Part Context

This part belongs to the 1N6263 series of small signal Schottky diodes manufactured by Central Semiconductor Corp. The standard 1N6263 designation has been transitioned to the CMDD6263 replacement part number according to official product discontinuation notices. The TR suffix indicates tape and reel packaging availability.

Replacement Considerations

Official documentation lists CMDD6263 as the designated replacement for the 1N6263 series.