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The Microchip Technology 1N645A is a silicon switching diode housed in the DO-35 (DO-204AH) through-hole package. It features a maximum DC reverse voltage of 225 V and an average rectified current of 400 mA. The device exhibits a reverse leakage current of 200 nA at its rated voltage. Constructed with metallurgically bonded, hermetically sealed double plug construction, it is available in JAN, JANTX, and JANTXV grades per MIL-PRF-19500/240 specifications.
Verify the specific ordering suffix to confirm the exact grade (JAN, JANTX, or JANTXV) and RoHS status, as these attributes vary by manufacturer lot and configuration. Ensure the DO-35 package type matches the target PCB footprint requirements. Cross-reference the datasheet for precise thermal and electrical limits before finalizing the bill of materials.
Select this component when a hermetically sealed, high-reliability silicon switching diode is required for through-hole mounting. The 225 V reverse voltage rating suits moderate voltage isolation needs, while the 400 mA current capacity supports low-power signal processing. Verify that the operating temperature range aligns with the specific environmental conditions of the intended deployment scenario.
The 1N645 series belongs to Microchip's line of general-purpose silicon rectifiers designed for robust performance in demanding environments. Manufactured under strict military standards, these diodes utilize glass passivation and double plug construction to ensure long-term stability. The series serves as a critical component in applications where standard commercial-grade diodes may fail due to harsh operational conditions.
Direct substitutes include other 1N645 variants from different manufacturers, provided they meet the DO-35 package and 225 V/400 mA electrical specifications. Verify pinout compatibility and thermal characteristics before substitution.