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The 1N645UR-1 is a standard recovery rectifier diode manufactured by Microchip Technology. It features a maximum DC reverse voltage of 225 V and an average rectified current of 400 mA. The device utilizes a DO-213AA surface mount package. Electrical characteristics include a forward voltage of 1 V at 400 mA and a reverse leakage current of 50 nA at 225 V. It operates within a junction temperature range of -65°C to 175°C.
Verify the specific suffix (JAN, JANTX, or JANTXV) required for your application, as these denote different quality levels under MIL-PRF-19500/240. Confirm that the DO-213AA package matches your PCB footprint. Ensure the component meets the necessary environmental and radiation hardness specifications for your intended deployment environment before finalizing procurement.
Select this component when a 225 V reverse voltage rating and 400 mA current capacity are required in a surface mount format. Consider the standard recovery speed if faster switching is not critical. Verify that the operating temperature range of -65°C to 175°C aligns with your system's thermal constraints. Compare against other 1N645 series variants to determine the appropriate military grade level.
This part belongs to the 1N645 series of standard recovery rectifiers produced by Microchip Technology. It is designed for high-reliability applications, often serving as a drop-in replacement for through-hole equivalents in modern surface mount designs. The series is characterized by robust performance in demanding environments.
Direct substitutes include other 1N645UR-1 variants with JAN, JANTX, or JANTXV suffixes. Cross-reference with other manufacturers' 1N645 equivalents only if electrical parameters and package dimensions are identical. Verify compatibility with existing board layouts and thermal management strategies.