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The 1N647-1 is a silicon rectifier diode manufactured by Microchip Technology, available in JAN, JANTX, and JANTXV grades per MIL-PRF-19500/240. It features a maximum DC reverse voltage of 400 V and an average rectified current of 400 mA. The device exhibits a forward voltage of 1 V at 400 mA and a reverse leakage current of 50 nA at 400 V. It operates within a junction temperature range of -65°C to +175°C and utilizes a DO-35 axial through-hole package.
Verify the specific grade suffix (JAN, JANTX, or JANTXV) required for your application, as performance criteria vary by military specification level. Confirm that the DO-35 axial leaded package aligns with your board layout constraints. Ensure the supplier provides traceability documentation consistent with MIL-PRF-19500/240 requirements for qualified parts.
Select this component when high-reliability rectification is needed in space-constrained axial packages. The 400 V rating suits moderate voltage isolation needs, while the 400 mA current capacity supports low-power signal processing. Consider the specific environmental qualification level based on the operational stress profile of the target system.
This part belongs to the 1N647 series of silicon rectifiers designed for ruggedized applications. It serves as a standard replacement for legacy military specifications, offering consistent electrical parameters across different quality grades. The DO-35 package allows for easy integration into traditional through-hole manufacturing processes.
Direct substitutes include other manufacturers' 1N647 variants meeting MIL-PRF-19500/240 standards. Verify pinout compatibility and ensure equivalent reverse voltage and current ratings before substitution.