1N6471E3

Overview

The 1N6471E3 is a silicon switching diode manufactured by Microchip Technology, housed in the DO-204AH (DO-35) axial through-hole package. It features a maximum DC reverse voltage of 400 V and an average rectified current rating of 400 mA. The device operates within a junction temperature range of -65°C to +175°C.

Feature Summary

• High thermal stability with extended operating temperature range
• Robust glass-passivated junction construction
• Standard axial leaded form factor for easy mounting

Applications

• General-purpose rectification circuits
• Switching applications requiring high reverse voltage blocking
• Industrial control systems

Procurement Notes

Verify the manufacturer designation as Microchip Technology or its predecessor entities like Microsemi. Confirm the DO-204AH/DO-35 package style matches your PCB footprint requirements. Ensure the RoHS-compliant suffix 'E3' aligns with environmental regulations for your specific assembly process.

Selection Notes

Select this component when a standard axial diode with 400V reverse capability and 400mA continuous current handling is required. Consider the wide junction temperature range for harsh environments. Verify that the forward voltage drop characteristics meet the efficiency needs of the specific circuit design.

Part Context

This part belongs to the legacy 1N series of silicon switching diodes, originally standardized by JEDEC. The 'E3' suffix indicates lead-free termination compliant with RoHS directives. It serves as a direct replacement for older non-RoHS versions in existing designs.

Replacement Considerations

Direct equivalents include parts from other manufacturers following the 1N4148/1N914 family standards but rated for higher currents, such as the 1N400x series if lower speed is acceptable. Verify pinout compatibility before substitution.