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The Microchip Technology 1N648-1 is a silicon rectifier diode designed for through-hole mounting in the DO-35 axial package. It features a maximum DC reverse voltage of 500 V and an average forward current rating of 400 mA. The device exhibits a standard recovery time exceeding 500 ns, classifying it as a general-purpose rectifier. Forward voltage drop is specified at 1 V when conducting 400 mA, with a maximum reverse leakage current of 50 nA at rated voltage. Operating junction temperature ranges from -65°C to +175°C.
Verify component authenticity by cross-referencing the manufacturer part number 1N648-1 with official Microchip Technology documentation. Confirm that the physical package matches the specified DO-35 axial form factor and that the marking aligns with factory standards. Ensure compliance with required electrical parameters before integration into final designs.
Select this component where moderate current handling and high voltage blocking are required in a compact axial package. The standard recovery speed makes it appropriate for low-frequency applications rather than high-speed switching. Evaluate thermal management requirements given the 175°C maximum junction temperature capability and 400 mA continuous current rating.
This device belongs to the standard silicon rectifier category manufactured by Microchip Technology. It utilizes axial leaded construction within the DO-35 envelope, offering a robust solution for through-hole PCB assembly. The product line emphasizes reliability in industrial and commercial electronic systems requiring dependable power conversion.
Substitute only with components explicitly confirmed as electrically equivalent by the manufacturer or verified datasheets. Do not assume interchangeability based solely on package similarity or nominal ratings without verifying specific electrical characteristics and mechanical dimensions.