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The Microchip Technology 1N648/TR is a single silicon Zener diode designed for voltage regulation applications. It features a nominal Zener voltage of 4.7 V with a tolerance of 5 percent and a maximum power dissipation of 1.5 W. The device utilizes a DO-41 axial through-hole package and operates within a junction temperature range of -65 °C to +175 °C. Key electrical characteristics include a Zener impedance of 8 Ohms at a test current of 53 mA, with a maximum Zener current rating of 304 mA.
Verify the specific suffix designation against official Microchip documentation to confirm exact testing conditions and binning requirements. Ensure that the procurement channel provides traceability data consistent with the manufacturer's quality standards. Confirm RoHS compliance status directly from the latest datasheet revision prior to finalizing orders.
Select this component when a 4.7 V regulation point is required in a through-hole design. Evaluate the 1.5 W power dissipation capability against expected thermal loads. Compare the 8 Ohm impedance specification against circuit sensitivity requirements to ensure adequate regulation performance under varying load currents.
This part belongs to the standard 1N series of Zener diodes manufactured by Microchip Technology. It serves as a fundamental discrete semiconductor component for analog signal conditioning and power supply stabilization. The DO-41 package offers a balance of current handling capacity and physical footprint suitable for general electronic assemblies.
Cross-reference with other manufacturers offering 1N648 equivalents in the DO-41 package. Verify that substitute parts meet the identical 4.7 V nominal voltage and 1.5 W power rating specifications.