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The 1N6480HE3_A/H is a standard recovery rectifier manufactured by Vishay General Semiconductor - Diodes Division. It features a single diode configuration housed in the DO-213AB (MELF) surface-mount package. The device supports a maximum repetitive peak reverse voltage of 200 V and an average forward rectified current of 1 A. Key electrical parameters include a forward voltage of 1.1 V at 1 A, a maximum non-repetitive surge current of 30 A, and a reverse leakage current of 10 µA at 200 V. It operates within a junction temperature range of -65°C to +175°C.
Verify the specific suffix against official Vishay documentation to confirm exact packaging and tape-and-reel specifications. Ensure the component meets AEC-Q101 requirements if used in automotive contexts. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm availability and authenticity before procurement.
Select this component for designs requiring a 200 V rating and 1 A continuous current in a compact MELF package. Consider the 175°C maximum junction temperature for high-thermal environments. Verify that the standard recovery speed meets the circuit switching requirements without necessitating faster or ultra-fast alternatives.
This part belongs to the 1N6480 series of glass-passivated junction silicon rectifiers. It is designed for use in applications where space constraints and high-temperature operation are critical factors. The DO-213AB package provides a robust surface-mount solution suitable for automated assembly processes.
Consult official Vishay substitution guides for verified equivalents. Generic replacements may not match the AEC-Q101 qualification or specific thermal characteristics.