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The 1N6481HE3_A/H is a standard rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. It features a 1A average forward rectified current and a 400V maximum repetitive peak reverse voltage. The device utilizes a DO-213AB MELF glass package for surface-mount installation. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 30A, a maximum DC reverse leakage current of 10µA at 400V, and a maximum DC forward voltage drop of 1.1V at 1A. It operates within a junction temperature range of -65°C to +175°C.
Verify the specific suffix designation against official Vishay documentation to confirm exact electrical tolerances and packaging specifications. Ensure compatibility with existing board layouts regarding the DO-213AB MELF footprint. Confirm that the component meets all required environmental and reliability standards for the intended end-use application before finalizing procurement decisions.
Select this component when a surface-mount standard rectifier with 400V blocking capability and 1A continuous current is required. The MELF glass package offers advantages in thermal performance and hermetic sealing compared to plastic equivalents. Consider the 175°C junction temperature rating for high-temperature environments where standard silicon diodes might fail.
This part belongs to the 1N648x series of general-purpose rectifiers from Vishay. These components are designed as replacements for traditional through-hole devices in modern surface-mount assembly processes. The HE3 designation indicates an enhanced efficiency version, typically featuring lower forward voltage drops and improved switching characteristics compared to standard variants in the same family.
Direct substitutes include other 1N6481 variants from different manufacturers providing identical 1A/400V ratings in MELF packages. Verify pinout compatibility and thermal resistance values when cross-referencing with alternative suppliers to ensure seamless integration into existing designs without modification.