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Product Detailed Parameters
- Description：DIODE STD 600V 400MA DO204AH
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：600 V
- Current - Average Rectified (Io)：400mA
- Voltage - Forward (Vf) (Max) @ If：1 V @ 400 mA
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：50 nA @ 600 V
- Capacitance @ Vr, F：-
- Mounting Type：Through Hole
- Package / Case：DO-204AH, DO-35, Axial
- Supplier Device Package：DO-204AH (DO-35)
- Operating Temperature - Junction：-65°C ~ 175°C
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Overview
The Microchip Technology 1N649-1 is a silicon switching diode housed in a DO-35 glass axial leaded package. It is designed for general-purpose rectification and signal processing applications requiring standard recovery characteristics. The device supports a maximum repetitive peak reverse voltage of 600V and an average forward rectified current of 400mA. It features a non-repetitive peak forward surge current capability of 5A. The component operates within a junction temperature range of -65°C to +200°C, ensuring reliability in demanding environments.
Feature Summary
- Utilizes a hermetically sealed DO-35 glass axial package for environmental protection
- Engineered with standard recovery speed suitable for general-purpose switching
- Capable of high thermal stability with extended junction temperature limits
Applications
- General-purpose rectification circuits
- Signal processing and clamping applications
- Computer logic interface protection
Procurement Notes
Verify the specific suffix (e.g., /TR) to confirm packaging format such as tape and reel versus bulk. Confirm that the 600V rating aligns with system requirements, as some sources may reference different variants. Ensure the supplier provides official datasheets from Microchip or authorized distributors to guarantee authenticity and traceability for critical deployments.
Selection Notes
Select this component when a robust, glass-passivated silicon diode is required for standard recovery tasks. The DO-35 package offers through-hole mounting convenience. Consider the 600V reverse voltage margin relative to circuit peaks. Evaluate the 400mA continuous current limit against load profiles to prevent thermal overload during sustained operation.
Part Context
The 1N649-1 belongs to the broader family of MIL-spec and commercial grade silicon switching diodes produced by Microchip Technology. It serves as a reliable alternative to legacy military components, maintaining compatibility with traditional DO-35 footprints while offering modern manufacturing consistency for industrial and aerospace electronics.
Replacement Considerations
Direct substitutes include other 600V, 400mA silicon switching diodes in the DO-35 package. Verify pinout compatibility and ensure equivalent reverse leakage and recovery time specifications before swapping.
