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The Microchip Technology 1N649UR-1/TR is a silicon rectifier diode designed for surface-mount applications in the DO-213AA package. It features a maximum repetitive peak reverse voltage of 600 V and an average forward rectified current of 400 mA. The device exhibits a maximum forward voltage drop of 1 V at rated current and a low leakage current of 50 nA. It supports a maximum surge current of 5 A and operates within a junction temperature range of -65 °C to +175 °C, with a power dissipation rating of 500 mW.
Verify the specific suffix (e.g., JAN, JANTX) against MIL-PRF-19500/240 requirements to ensure correct quality level. Confirm RoHS status as non-compliant variants exist. Validate lead times for factory special orders. Ensure packaging format matches design needs. Check availability constraints before finalizing procurement plans.
Select this component when hermetic sealing and high thermal stability are required. The DO-213AA package suits automated surface-mount assembly. Verify that the 600 V reverse voltage and 400 mA current ratings exceed circuit demands. Consider the 175 °C operating limit for harsh environments. Ensure compatibility with existing footprint designs.
This part belongs to the 1N649 series of silicon rectifiers manufactured by Microchip Technology. It is available in various qualification levels including JAN, JANTX, and JANTXV per MIL-PRF-19500/240. The series provides reliable rectification for demanding applications requiring hermetic sealing and robust performance under extreme conditions.
Direct substitutes include JANTX1N649UR-1 and JAN1N649UR-1. These share identical electrical specifications but differ in reliability qualification levels. Verify package compatibility and pinout alignment before substitution.