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The UMW 1N65L is an N-channel power MOSFET housed in a TO-252 surface-mount package. It features a drain-source voltage rating of 650V and a continuous drain current of 1A at 25°C. The device supports a gate-source voltage of ±30V and is designed for high-voltage switching applications.
Verify the specific ordering code against manufacturer documentation to ensure correct package and tape-and-reel specifications. Confirm that the component matches the required electrical ratings for your design. Cross-reference datasheets from authorized distributors to validate authenticity and technical parameters before integration into production.
Select this component when a 650V N-channel MOSFET is required in a TO-252 package. Ensure the application demands a continuous current rating of 1A or less. Verify thermal management requirements align with the package's dissipation capabilities. Compare against alternative part numbers only if specific pinout or parameter deviations are necessary.
This component belongs to the UMW 1N65 series, which includes variants such as the 1N65G in SOT-223 packaging. The series targets general-purpose high-voltage switching needs. The 1N65L specifically denotes the TO-252 form factor within this product line.
Check for direct substitutes like the UMW 1N65G if package flexibility exists. Verify compatibility with other 650V N-channel MOSFETs in TO-252 packages by comparing Vdss, Id, and Rds(on) values.