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The Microchip Technology 1N6623US is a high-reliability silicon rectifier diode designed for surface-mount applications. It features an avalanche capability and operates in the D-5A SQ MELF package. The device supports a maximum average forward rectified current of 1 A and withstands a repetitive peak reverse voltage of 800 V. It exhibits a maximum non-repetitive peak surge current of 20 A at 8.3 ms single half-sine-wave. The unit functions within an operating junction and storage temperature range from -65 °C to +150 °C.
Verify the specific suffix configuration against official datasheets, as variations exist between bulk and tape-and-reel packaging. Confirm that the procurement channel provides traceable documentation suitable for quality assurance standards. Ensure the component meets all required military or industrial specifications before final integration into the design.
Select this component when a hermetically sealed, high-voltage rectifier is required for space-constrained surface-mount designs. The D-5A package offers a compact footprint while maintaining high thermal performance. Consider the 800 V rating and 1 A current capacity to ensure adequate headroom for the target application's electrical stress conditions.
This part belongs to the 1N66xxUS series of high-reliability rectifiers manufactured by Microchip Technology. These components are engineered for demanding environments where standard commercial parts may fail. The series utilizes advanced silicon planar technology to provide consistent performance across extreme temperature ranges.
Publicly confirmed substitute part numbers are not available in the provided source material.