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The Microchip Technology 1N6627 is a single fast recovery rectifier diode designed for surface-mount applications. It features a maximum repetitive peak reverse voltage of 440 V and an average forward rectified current of 1.75 A. The device utilizes the SQ-MELF, A package and exhibits a typical reverse recovery time of 30 ns. Forward voltage is specified at 1.35 V when conducting 2 A, with a maximum reverse leakage current of 2 µA at 440 V. Junction capacitance is rated at 40 pF at 10 V and 1 MHz. The component operates within a junction temperature range of -65°C to 150°C.
Verify the specific suffix (e.g., US/TR) against official datasheets to confirm packaging type and compliance status. Confirm RoHS designation as some variants may not meet current environmental standards. Validate lead times due to reported long production cycles. Ensure compatibility with existing footprint designs before procurement.
Select this component for designs requiring fast recovery characteristics in a small surface-mount form factor. Evaluate thermal management requirements given the 150°C junction limit. Compare reverse voltage ratings against circuit peaks to ensure adequate margin. Consider the 1.75 A current rating relative to load demands and derating factors.
This part belongs to the 1N662x series of fast recovery rectifiers manufactured by Microchip Technology. The series offers various voltage ratings from 220 V to 880 V while maintaining consistent current handling and package styles. These devices are engineered for reliability in demanding industrial and commercial power electronics environments.
Consult official substitution guides for equivalent parts. Verify pinout compatibility and electrical parameter overlaps before replacing.