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The Microchip Technology 1N6631E3 is a single ultra-fast recovery rectifier diode housed in an axial leaded E package. It features a maximum repetitive reverse voltage of 1100 V and a forward current rating of 4 A. The device exhibits a fast recovery time of 80 ns with low reverse leakage current of 4 µA. Designed for through-hole mounting, it operates within a temperature range of -65 °C to +150 °C junction temperature.
Verify the specific suffix (E3) confirms RoHS compliance and axial lead configuration. Confirm the manufacturer source is Microchip Technology to ensure authenticity. Check datasheet revisions for any updates on absolute maximum ratings or thermal resistance values before final integration into designs.
Select this component when high voltage blocking capability above 1 kV is required alongside rapid switching speeds. The 4 A continuous forward current rating supports moderate power levels. Ensure the circuit design accommodates the 80 ns recovery time to minimize switching losses and electromagnetic interference in high-speed environments.
This part belongs to Microchip's standard rectifier diode lineup, specifically engineered for general-purpose high-voltage applications. The 'E' designation typically refers to the specific axial leaded package style used in through-hole assembly processes. It serves as a robust solution for replacing older silicon rectifiers in legacy designs requiring improved recovery times.
Direct substitutes must match the 1100 V reverse voltage, 4 A forward current, and approximately 80 ns recovery time. Verify pinout compatibility for axial leads. Cross-reference with other manufacturers' ultra-fast recovery diodes rated for similar electrical parameters if Microchip stock is unavailable.