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The Microchip Technology 1N6631U/TR is a single ultra-fast recovery rectifier diode designed for surface-mount applications. It features a reverse voltage rating of 1.1 kV and an average forward current capacity of 4 A. The device exhibits a maximum forward voltage drop of 1.6 V and a rapid recovery time of 80 ns, with a low reverse leakage current of 4 uA. It supports a maximum surge current of 60 A and operates within a temperature range of -65 C to +150 C.
Verify the specific suffix (e.g., TR) against official datasheets to confirm tape-and-reel packaging requirements. Confirm that the through-hole installation style listed in some databases aligns with the actual surface-mount package designation. Ensure compliance with RoHS directives if required by the application environment.
Select this component when high-voltage blocking capability and fast switching speeds are critical. The 1.1 kV rating suits high-voltage DC link applications. Evaluate thermal management needs given the 4 A continuous current rating and 150 C maximum junction temperature limit.
This part belongs to the 1N66xx series of hyper-fast recovery rectifiers from Microchip Technology. These devices are engineered for high-efficiency applications requiring minimal reverse recovery charge. The series spans various voltage ratings up to 1200 V, providing flexibility for diverse power conversion topologies.
Consult official substitution guides for equivalent ultra-fast recovery diodes with matching 1.1 kV and 4 A ratings. Verify pinout compatibility and package dimensions before replacing the original component in existing designs.