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The Microchip Technology 1N6638US is a small signal switching diode designed for high-reliability applications. It features a single silicon junction with a peak reverse voltage of 125 V and an average forward current rating of 300 mA. The device supports a maximum surge current of 2.5 A and exhibits a fast reverse recovery time of 4.5 ns. Electrical characteristics include a forward voltage of 1.1 V at rated current and a low reverse leakage current of 35 nA. It operates within a temperature range of -65°C to +175°C and is housed in a D-2 through-hole package.
Verify the specific ordering suffix against official Microchip documentation to confirm exact screening levels and test requirements. Ensure the procurement channel provides valid traceability records. Confirm that the component meets the necessary military or industrial standards required for the intended deployment environment before finalizing acquisition.
Select this component when hermetic sealing and wide temperature operation are mandatory. The 125 V rating suits moderate voltage switching tasks. Compare the 300 mA continuous current limit against circuit demands. Verify that the through-hole D-2 package aligns with the board layout constraints and assembly processes available.
This part belongs to the 1N6638 series of switching diodes manufactured by Microchip Technology. It serves as a robust alternative to standard commercial diodes in environments requiring enhanced durability. The series is characterized by its silicon construction and glass passivation, ensuring long-term reliability in critical electronic systems.
Direct substitutes include JAN1N6638US and JANS1N6638US, which share identical electrical specifications but may differ in screening levels. Verify package compatibility and lead configuration before substitution.