1N6639US

Overview

The Microchip Technology 1N6639US is a hermetically sealed switching diode designed for high-reliability applications. It features a maximum repetitive peak reverse voltage of 100 V and a working reverse voltage of 75 V. The device supports an average forward current of 300 mA with a surge current capability of 2.5 A. Electrical characteristics include a maximum reverse recovery time of 4.0 ns and a typical junction capacitance of 2.5 pF at zero bias. Operating temperatures range from -65°C to +175°C.

Feature Summary

• Hermetically sealed non-cavity glass package construction
• Metallurgically bonded internal structure
• Compliant with MIL-PRF-19500/609 standards

Applications

• High-speed computer logic circuits
• Signal processing systems
• Military and aerospace electronic assemblies

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance requirements. Confirm that the component meets the necessary environmental and quality standards for the intended deployment environment before finalizing procurement decisions.

Selection Notes

Select this component when a hermetically sealed, metallurgically bonded switching diode is required for extreme temperature environments. Ensure the mounting surface system Coefficient of Expansion matches the device specifications to maintain mechanical integrity during thermal cycling.

Part Context

This part belongs to the 1N6639 series of switching diodes manufactured by Microchip Technology. It is available in JAN, JANTX, JANTXV, and JANS grades per MIL-PRF-19500/609. The D-5D case provides a robust, hermetically sealed glass enclosure suitable for demanding operational conditions.

Replacement Considerations

JAN1N6639US

FAQ

What is the polarity indicator on the 1N6639US?

The cathode end of the device is identified by a band.

What is the thermal resistance of the 1N6639US?

The thermal resistance (RθJC) is a maximum of 50 °C/W at a lead length of 0 inches.