1N6641

Overview

The Microchip Technology 1N6641US/TR is a small signal switching diode designed for computer and general-purpose applications. It features a single configuration with a maximum repetitive peak reverse voltage of 75 V and an average forward rectified current of 0.2 A. The device exhibits a low forward voltage drop of 1.25 V at 200 mA and a fast reverse recovery time of 4 ns. Operating within a junction temperature range of -65°C to +175°C, it utilizes the SQ-MELF surface-mount package.

Feature Summary

• Fast switching capability with a 4 ns reverse recovery time
• High thermal stability supporting operation up to 175°C
• Low forward voltage drop for efficient power handling
• Compact surface-mount SQ-MELF packaging

Applications

• Computer logic circuits
• General purpose switching
• Clamping applications
• Protection circuits

Procurement Notes

Verify the specific suffix (e.g., TR) against official datasheets to confirm tape-and-reel packaging requirements. Confirm RoHS compliance status as specifications may vary by manufacturing lot or region. Ensure the SQ-MELF footprint matches the target PCB design before finalizing procurement orders.

Selection Notes

Select this component when high-speed switching performance is required in compact designs. The wide operating temperature range makes it suitable for harsh environments. Verify that the 75 V reverse voltage rating exceeds the circuit's peak inverse voltage demands.

Part Context

This part belongs to the standard 1N66xx series of silicon planar switching diodes manufactured by Microchip Technology. These components are engineered for reliability in demanding digital and analog switching applications, offering consistent electrical characteristics across production batches.

Replacement Considerations

The 1N6641US/TR is listed as a parameter-equivalent replacement for the 1N6631US.