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Product Detailed Parameters
- Description：DIODE STANDARD 75V 300MA DO204AH
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：75 V
- Current - Average Rectified (Io)：300mA
- Voltage - Forward (Vf) (Max) @ If：1.2 V @ 100 mA
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：5 ns
- Current - Reverse Leakage @ Vr：500 nA @ 75 V
- Capacitance @ Vr, F：5pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：DO-204AH, DO-35, Axial
- Supplier Device Package：DO-204AH (DO-35)
- Operating Temperature - Junction：-65°C ~ 175°C
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Overview
The Microchip Technology 1N6642 is a military-qualified small-signal switching diode designed for high-speed applications. It features a peak reverse voltage of 75 V and an average forward current rating of 300 mA. The device exhibits a fast recovery time of 5 ns at specified test conditions, with a maximum reverse leakage current of 500 nA. It operates within a junction temperature range of -65°C to +175°C and utilizes a hermetically sealed DO-35 axial leaded package.
Feature Summary
- Hermetically sealed construction using internal metallurgical bonded technology
- Military qualification per MIL-PRF-19500/578 standards
- Ultrafast switching speed suitable for high-frequency circuits
Applications
- Computer peripheral equipment
- Magnetic core memory systems
- Thin-film memory arrays
- Plated-wire memory decoding or encoding
Procurement Notes
Verify the specific qualification level (JAN, JANTX, JANTXV, or JANS) required for your application, as performance specifications vary by grade. Confirm package availability in bulk or reel formats directly with the manufacturer or authorized distributors. Ensure compliance with export control regulations associated with military-grade semiconductor components.
Selection Notes
Select this component when hermetic sealing and radiation hardness are critical requirements. Compare the 5 ns recovery time against circuit timing constraints. Verify that the 75 V reverse voltage rating exceeds the maximum transient voltages present in the target switching environment.
Part Context
This part belongs to the 1N6638, 1N6642, and 1N6643 series of voidless hermetically sealed switching diodes. These devices share similar JEDEC registration and package styles but differ in specific electrical parameters such as breakdown voltage and capacitance values defined in the official datasheet.
Replacement Considerations
Direct substitutes include JAN1N6642, JANTX1N6642, and JANTXV1N6642. These variants maintain the same physical footprint and basic electrical characteristics while offering different levels of military screening and reliability assurance.
