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The Microchip Technology 1N6642UB2R/TR is a voidless hermetically sealed switching diode qualified per MIL-PRF-19500/578. It features ultra-fast recovery time and very low capacitance within a metallurgically bonded non-cavity glass package. The device supports an average rectified forward current of 300 mA at +75°C and withstands a peak reverse voltage of 75 V. Operating temperatures range from -65°C to +175°C, with a maximum junction-to-ambient thermal resistance of 250°C/W.
Verify the specific qualification level (JAN, JANTX, JANTXV, or JANS) required for your application, as the base part number covers multiple military grades. Confirm tape and reel packaging specifications against EIA-296 standards if automated assembly is planned. Ensure lead material and plating requirements align with your soldering processes, noting that tin-lead plate is standard.
Select this component when high reliability and radiation hardness are critical compared to commercial alternatives. The 1N6642 variant specifically offers a 75 V working peak reverse voltage, distinguishing it from the 1N6638 (150 V) and 1N6643 (50 V). Consider the hermetic seal for harsh environments where moisture ingress must be prevented, unlike standard plastic packages.
This diode belongs to the JEDEC registered 1N66xx series of small-signal switching diodes manufactured by Microchip Technology (formerly Microsemi). These devices are designed to replace older industry standards like the 1N4148 and 1N914 while offering superior performance in terms of speed and leakage current. The 'U' suffix typically denotes surface mount or specific package variations within the broader family.
Officially documented replacements include 1N4148, 1N4148-1, 1N4150, 1N4150-1, and 1N914.