1N6642US/TR

Overview

The Microchip Technology 1N6642US/TR is a small signal switching diode designed for surface mount applications. It features a peak reverse voltage of 75 V and a maximum forward current of 300 mA. The device exhibits a fast recovery time of 5 ns with a maximum forward voltage of 1.2 V at specified currents. Reverse leakage current is limited to 500 nA, and the component supports an operating temperature range from -65 C to +175 C. It is housed in a D-5D-2 package and supplied in a reel format.

Feature Summary

• Hermetically sealed construction with internal metallurgical bonding for enhanced reliability
• Fast switching speed suitable for high-frequency digital logic circuits
• Low junction capacitance optimized for computer peripheral equipment

Applications

• Digital logic circuits and decoding applications
• Computer peripheral equipment interfaces
• Magnetic core and thin-film memory systems

Procurement Notes

Verify the specific revision level and manufacturing date code upon receipt to ensure compliance with project requirements. Confirm that the D-5D-2 package dimensions match the intended PCB footprint. Check for any product change notifications regarding material composition or testing standards before final integration into the design.

Selection Notes

Select this component when hermetic sealing and military-grade reliability are required for surface mount designs. The low capacitance and fast recovery characteristics make it appropriate for high-speed signal processing. Ensure the thermal management strategy accommodates the specified operating temperature range during continuous operation.

Part Context

This part belongs to the JEDEC registered 1N66xx series of voidless, hermetically sealed switching diodes. These components are qualified under MIL-PRF-19500/578 standards. The series provides robust performance for demanding environments where standard commercial diodes may fail due to moisture ingress or mechanical stress.

Replacement Considerations

• JAN1N6642US/TR